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| 篇名/題名： | Ballistic transport in bilayer nano-graphite ribbons under gate and magnetic fields |
| 摘要： | This study uses the tight-binding model to examine the ballistic transport of short and infinitely long bilayer nano-graphite ribbons for different stacked structures, AA and AB, under perpendicularly applied gate and magnetic fields. In the small bias region, the conduction of the AB-stacked ribbon is better than for the AA. Under a gate field with small bias, the AB-stacked ribbon exhibits a significant current peak at the zero gate field point, similar to the graphene ribbon. On the contrary, this current peak is not found in the AA-stacked case. Under a perpendicular magnetic field with small bias, the magnetoresistance ratio in both stacked graphene ribbons are proportional to the square of the magnetic field. |
| 類型： | 期刊論文 |
| 西元出版年： | 2008 |
| 著作語言： | zh-TW |
| 作者： | Sun, Shih-Jye、Chang, C.P.
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| 學校系所： | 通識教育中心 |
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