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| 篇名/題名： | 電場下少層石墨電子性質 |
| 摘要： | The low-energy electronic properties of multilayer graphite are studied through the tight-binding model. The dependence of electronic properties on the number of layers, the interlayer interactions, and the electric field is investigated in detail. The interlayer interactions destroy the symmetry and the isotropy of energy bands, change linear bands into parabolic bands, and cause the weak overlap of valence and conduction bands. The electric field leads to the subband anticrossing, the change of subband spacing, and the increase of edge states. Dilayer graphite becomes a semiconductor. The effects resulting from interlayer interactions and electric field are completely reflected on the features of density of states, such as two kinds of special structures, the shift of peak position, the change of peak height, and the alternation of band gap. |
| 類型： | 期刊論文 |
| 西元出版年： | 2006 |
| 著作語言： | zh-TW |
| 作者： | Lu,C. L.
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| 學校系所： | 通識教育中心 |
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